Selective Plasma Oxidation of Ultrasmall Si Nanowires
نویسندگان
چکیده
منابع مشابه
Study on Thermal Oxidation of Si Nanowires
In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1ÿxGex=Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 C wet oxidation will ...
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2015
ISSN: 1932-7447,1932-7455
DOI: 10.1021/acs.jpcc.5b11027